smm4f series 10 features typical peak pulse power: ? 400 w (10/1000 s) ? 2.4 kw (8/20 s) stand off voltage range: from 5 v to 33 v unidirectional types low leakage current: ? 0.2 a at 25 c ? 1 a at 85 c operating t j max: 175 c jedec registered package outline rohs package halogen free molding compound complies with the following standards iec 61000-4-2 level 4: ? 15 kv (air discharge) ? 8 kv (contact discharge) mil std 883g-method 3015-7: class3 ? 25 kv (human body model) description the smm4f transil series has been designed to protect sensitive equipment against electro-static discharges according to iec 61000-4-2, mil std 883 method 3015, and electrical over stress such as iec 61000-4-4 and 5. they are generally for surges below 400 w 10/1000 s. this planar technology ma kes it compatible with high-end equipment and smps where low leakage current and high junction temperature are required to provide reli ability and stability over time. their low clamping voltages provide a better safety margin to protect sensitive circuits with extended life time expectancy. packaged in stmite flat, this minimizes pcb space consumption (footprint in accordance with ipc 7531 standard). k a stmite flat (do222-aa) www.shunyegroup.com.cn 1/5
2/5 characteristics smm4f 1 characteristics table 1. absolute ratings (t amb = 25 c) symbol parameter value unit v pp peak pulse voltage (iec 61000-4-2 contact discharge) 30 kv p pp peak pulse power dissipation (1) 1. for a surge greater than the maximum val ues, the diode will fail in short-circuit. t j initial = t amb 400 w p power dissipation on infinite heatsink t amb = 125 c 2.5 w i fsm non repetitive surge peak forward current for unidirectional types t p = 10 ms t j initial = t amb 30 a t stg storage temperature range -65 to +175 c t j operating junction temperature range -55 to +175 c t l maximum lead temperature for soldering during 10 s 260 c table 2. thermal resistances symbol parameter value unit r th(j-l) junction to leads 20 c/w r th(j-a) junction to ambient on pcb with recommended pad layout 250 table 3. electrical characteristics - parameter definitions (t amb = 25 c) symbol parameter v rm stand-off voltage v br breakdown voltage i r breakdown current v cl clamping voltage i rm leakage current @ v rm i pp peak pulse current t voltage temperature coefficient v f forward voltage drop r d dynamic resistance v cl v br v rm i rm i r i pp v i i f v f v cl v br v rm i rm i r i pp v i i f v f www.shunyegroup.com.cn
smm4f characteristics figure 1. definition of i pp pulse table 4. electrical characteristics - parameter values (t amb = 25 c) type i rm max@v rm v br @i r (1) v cl @i pp 10/1000 s r d (2) 10/1000 s v cl @i pp 8/20 s r d (2) 8/20 s t (3) 25 c 85 c min typ max max max max a v v ma v a va 10-4/c smm4f5.0a 10 50 5.0 6.46 6.80 7.14 10 9.2 43.5 0.047 13.4 174 0.04 5.7 smm4f6.0a 10 50 6.0 6.65 7.00 7.35 10 10.3 38.8 0.076 13.7 170 0.04 5.9 smm4f6.5a 10 50 6.5 7.13 7.50 7.88 10 11.2 37.5 0.093 14.5 160 0.04 6.1 smm4f8.5a 10 50 8.5 9.5 10.0 10.5 1 14.4 27.7 0.141 19.5 124 0.07 7.3 smm4f10a 0.2 1 10 11.4 12.0 12.6 1 17.0 23.5 0.187 21.7 106 0.09 7.8 smm4f12a 0.2 1 12 13.3 14.0 14.7 1 19.9 20.1 0.259 25.3 91 0.12 8.3 smm4f13a 0.2 1 13 14.3 15.0 15.8 1 21.5 18.6 0.309 27.2 85 0.13 8.4 smm4f15a 0.2 1 15 17.1 18.0 18.9 1 24.4 16.4 0.335 32.5 71 0.19 8.8 smm4f18a 0.2 1 18 20.9 22.0 23.1 1 29.2 14.0 0.436 39.3 59 0.27 9.2 smm4f20a 0.2 1 20 22.8 24.0 25.2 1 32.4 12.0 0.600 42.8 54 0.33 9.4 smm4f24a 0.2 1 24 26.6 28.01 29.4 1 38.9 9.5 1.00 50 46 0.47 9.6 SMM4F26A 0.2 1 26 28.5 30.0 31.5 1 42.1 9.0 1.18 53.5 43 0.51 9.7 smm4f28a 0.2 1 28 31.4 33.0 34.7 1 45.4 8.0 1.34 59.0 39 0.62 9.8 smm4f33a 0.2 1 33 37.1 39.0 41.0 1 53.3 7.0 1.76 69.7 33 0.87 10.0 1. pulse test: t p <50ms. 2. to calculate maximum clamping voltage at othe r surge currents, use the following formula v clmax = r d x i pp + v brmax 3. to calculate v br versus junction temperature, use the following formula: v br @ t j = v br @ 25 c x (1 + t x (t j - 25)) 100 50 %i pp t r t p 0 t repetitive peak pulse current tr = rise time (s) tp = pulse duration time (s) www.shunyegroup.com.cn 3/5
characteristics smm4f figure 4. clamping voltage versus peak pulse current (exponential waveform, maximum values) figure 2. peak power dissipation versus initial junction temperature figure 3. peak pulse power versus exponential pulse duration (t j initial = 25 c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 150 175 200 p pp [t j initial] / p p p [t j init ial =25 c] t (c) j initial 0.1 1.0 10.0 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 t j initial = 25 c t (ms) p p (kw) pp 0 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 t j initial=25 c smm4f33a smm4f24a smm4f15a smm4f5.0a tp = 8/20 s tp = 10/1000 s i pp (a) v cl (v) www.shunyegroup.com.cn 4/5
smm4f characteristics figure 9. leakage current versus junction temperature (typical values) figure 5. junction capacitance versus reverse applied voltage (typical values) figure 6. peak forward voltage drop versus peak forward current (typical values) 10 100 1000 10000 1 10 100 f=1 mhz v osc =30 mv rms t j =25 c smm4f5.0a smm4f15a smm4f24a smm4f33a c(pf) v (v) r 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j =25 c t j =125 c i (a) fm v (v) fm figure 7. relative variation of thermal impedance junction to ambient versus pulse duration (printed ciruit board fr4, s cu = 1 cm 2 ) figure 8. thermal resistance junction to ambient versus copper surface under each lead (printed circuit board fr4, e cu = 35 m) 0.00 0.01 0.10 1.00 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 on recommended pad layout z th(j-a) /r th(j-a) t (s) p 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 r th(j-a) (c/w) s (cm ) cu 2 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 1.e+04 25 50 75 100 125 150 175 v r =v rm v br 11.7v v br >11.7v t (c) j i (na) r www.shunyegroup.com.cn 5/5
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